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VCE IC
= =
1200 V 300 A
IGBT Module LoPak5 SPT
5SNS 0300U120100
Doc. No. 5SYA1528-02 July 03
* Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * Low profile compact baseless package for high power cycling capability * Snap-on PCB assembly * Integrated PTC substrate temperature sensor
Maximum rated values 1)
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Case operating temperature Storage temperature Mounting torques Symbol Conditions VCES IC ICM VGES Ptot IF IFM IFSM tpsc Visol Tvj Tc(op) Tstg M1 M2 Base-heatsink, M5 screws Main terminals, M6 screws -40 -40 2 4 VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave VCC = 900 V, VCEM CHIP 1200 V VGE 15 V, Tvj 125 C 1 min, f = 50 Hz Th = 25 C, per switch (IGBT) VGE = 0 V, Tvj 25 C Th = 60 C tp = 1 ms, Th = 60 C -20 min 1200 300 600 20 960 300 600 3600 10 2500 150 125 125 3 5 max Unit V A A V W A A A s V C C C Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNS 0300U120100
IGBT characteristic values
Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage
2)
Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf Eon VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 300 A, VGE = 15 V VCE = 1200 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
min 1200
typ
max
Unit V
1.9 2.1
2.3 1
V V mA mA nA V nC
Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
15 -500 4.5 4000 27 3.0 1.3 150 180 80 80 770 750 60 70 19 28 24 34 1650 20 500 6.5
VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 12 mA, VCE = VGE, Tvj = 25 C IC = 300 A, VCE = 600 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 600 V, IC = 300 A, RG = 3.3 W, VGE = 15 V, Ls = 55 nH, inductive load VCC = 600 V, IC = 300 A, RG = 3.3 W, VGE = 15 V, Ls = 55 nH, inductive load VCC = 600 V, IC = 300 A, VGE = 15, RG = 3.3 W, Ls = 55 nH, inductive load VCC = 600 V, IC = 300 A, VGE = 15, RG = 3.3 W, Ls = 55 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
nF
ns ns ns ns
Turn-on switching energy
mJ
Turn-off switching energy Short circuit current Module stray inductance plus to minus Resistance, terminal-chip
Eoff ISC Ls DC RCC'+EE'
mJ A nH m
tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM CHIP 1200 V
Th = 25 C Th = 125 C
0.9 1.0
2) Collector emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03 page 2 of 9
5SNS 0300U120100
Diode characteristic values
Parameter Continous forward voltage Peak reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy
3)
Symbol Conditions VF IRM QRR trr Erec VCC = 600 V, IF = 300 A, VGE = 15 V, RG = 3.3 W Ls = 55 nH inductive load IF = 300 A Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
min
typ 1.9 1.9 250 340 27 58 120 180 13 27
max 2.1
Unit V A C ns mJ
3) Forward voltage is given at chip level
Thermal properties
Parameter IGBT thermal resistance junction to heatsink Diode thermal resistance junction to heatsink Temperature sensor
4)
Symbol Conditions Rth(j-h)IGBT
4)
min
typ
max 0.13 0.19
Unit K/W K/W
Rth(j-h)DIODE PTC
Heatsink: flatness < 50 m, roughness < 6 m without ridge Thermal grease: conductivity 0.8 W/mK, thickness 30 m < t < 50 m RT = RT0 exp [B (1/T - 1/T0)] RT0 = 1k (3%), B = -760 K (2%), T0 = 298 K
Mechanical properties
Parameter Dimensions Clearance distance Surface creepage distance Weight Mounting
4)
Symbol Conditions LW
x x
min
x
typ
max
x
Unit mm mm mm
H
Typical , see outline drawing according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term:
184.5 106.5 34.5 9.5 11
DC DSC
according to IEC 60664-1 Term. to base: 9.5 and EN 50124-1 Term. to term: 12.5 460
gr
PCB mounting Control terminal
Hole for selftapping screw: 2.5 mm diameter, 6.0 mm deep Spring pins, pitch of pins = 4 mm, PCB thickness = 1.6 mm
4) For detailed mounting instructions refer to ABB Document No. 5SYA 2017
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03 page 3 of 9
5SNS 0300U120100
Electrical configuration
Outline drawing
For mounting instructions refer to ABB document No. 5SYA 2017 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03 page 4 of 9
5SNS 0300U120100
600
17V 15V 13V 11V
600
17V 15V
500
500
13V 11V
400
9V IC [A]
400
9V
IC [A]
300
300
200
200
100 Tvj = 25 C 0 0 1 2 VCE [V] 3 4 5
100 Tvj = 125 C 0 0 1 2 VCE [V] 3 4 5
Fig. 1
Typical output characteristics, chip level
Fig. 2
Typical output characteristics, chip level
600 VCE = 20 V 500
2.5 VGE = 15 V, RG = 3.3 ohm Tvj = 150 C 2
400 1.5 300 IC pulse / IC 1 200 125 C 25 C 0.5 Chip Power terminals 0 0 1 2 3 4 567 VGE [V] 8 9 10 11 12 0 0 200 400 600 800 VCE [V] 1000 1200 1400 IC [A]
100
Fig. 3
Typical transfer characteristics, chip level
Fig. 4
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03 page 5 of 9
5SNS 0300U120100
0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01
2 ESW [ mJ ] = (1,74E - 4 I C + 1,25E - 1 I C + 9,38)
0.10
VCC = 600 V RG = 3.3 ohm VGE = 15 V Tvj = 125 C Ls = 55 nH
0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00
VCC = 600 V IC = 300 A VGE = 15 V Tvj = 125 C Ls = 55 nH Eon
Eon, Eoff [J]
Eon, Eoff [J]
Eoff Eon
Eoff
0.00 0 100 200 300 400 IC [A] 500 600 700
0
5
10 15 RG [ohm]
20
25
Fig. 5
Typical switching energies per pulse vs collector current
Fig. 6
Typical switching energies per pulse vs gate resistor
1.00
10.00
td(off) td(off) td(on) td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s]
1.00
tr
0.10
td(on) tr
0.10
tf VCC = 600 V RG = 3.3 ohm VGE = 15 V Tvj = 125 C Ls = 55 nH
0.01 0 100 200 300 400 IC [ A ] 500 600 700
tf
VCC = 600 V IC = 300 A VGE = 15 V Tvj = 125 C Ls = 55 nH
20 25
0.01 0 5 10 15 RG [ohm]
Fig. 7
Typical switching times vs collector current
Fig. 8
Typical switching times vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03 page 6 of 9
5SNS 0300U120100
100 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies
20 VCC = 600 V
15 VCC = 800 V VGE [V]
C [nF]
10 Coes
10
Cres
5 IC = 300 A Tvj = 25 C
1 0 5 10 15 20 25 30 35 VCE [V]
0 0 1 2 Qg [C] 3
Fig. 9
Typical capacitances vs collector-emitter voltage
Fig. 10
Typical gate charge characteristics
400 VGE 15 V Tvj = 150 C
2000 1800 1600
300 1400 1200 IC, IF [A] RT [ohm] 200 1000 800 600 100 400 IGBT Diode 0 0 20 40 60 80 100 Th [C] 120 140 160 200 0 0 20 40 60 80 100 120 140 T [C]
RT = RT 0e B (1 T -1 T0 )
RT 0 = 1kW ( 3 %), B = -760 K ( 2%), T0 = 298 K
Fig. 11
Rated current vs temperature
Fig. 12
PTC temperature sensor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03 page 7 of 9
5SNS 0300U120100
40 35 30 25 Erec [mJ] 20 15 10 Qrr 5
Erec [mJ] = (-5,58E -5IF + 8,41E - 2 IF + 6,75 )
2
400 Irr 350 300 Erec VCC = 600 V RG = 3.3 ohm Tvj = 125 C Ls = 55 nH 250 200 150 100 50 0 700
800 700 600 25 C Irr [A], Qrr [C] 500 IF [A] 400 300 200 100 0 0.0 1.0 VF [V] 2.0 3.0 125 C
0 0 100 200 300 400 IF [A] 500 600
Fig. 13
Typical reverse recovery characteristics vs forward current
Fig. 14
Typical diode forward characteristics, chip level
40
400
35
VCC = 600 V IF = 300 A Tvj = 125 C Ls = 55 nH
350
30
300
20
200
Erec
15 150
10
100
Qrr
5 50
0 0 5 10 15 RG [ohm] 20 25
0
Fig. 15
Typical reverse recovery characteristics vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03 page 8 of 9
Irr [A], Qrr [C]
25 Erec [mJ]
Irr
250
5SNS 0300U120100
1
Analytical function for transient thermal impedance:
Zth(j-h) [K / W] IGBT, DIODE Zth(j-h) Diode 0.1
Zth JH(t) = a Ri(1 - e -t/t i )
i =1
2 9 14 17 21
Zth(j-h) IGBT
IGBT
n
i Ri(K/kW) ti(ms) Ri(K/kW) ti(ms)
1 117 164 167 139
3 2.4 0.5 10 1.2
4 1.6 0.2
5
0.01
0.001 0.001
0.01 t [s]
0.1
1
Fig. 16
Typical thermal impedance vs time
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
DIODE
Doc. No. 5SYA1528-02 July 03

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